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dc.contributor.authorKöprü, Ramazanen_US
dc.contributor.authorMomen, Hadi Ghasemzadehen_US
dc.contributor.authorYazgı, Metinen_US
dc.contributor.authorSaatlo, Ali Naderien_US
dc.date.accessioned2017-04-06T08:36:20Z
dc.date.available2017-04-06T08:36:20Z
dc.date.issued2017-06
dc.identifier.citationMomen, H. G., Yazgı, M., Köprü, R. & Saatlo, A. N. (2017). Low-loss active inductor with independently adjustable self-resonance frequency and quality factor parameters. Integration, the VLSI Journal, 58, 22-26. doi:10.1016/j.vlsi.2016.12.014en_US
dc.identifier.issn0167-9260
dc.identifier.issn1872-7522
dc.identifier.urihttps://hdl.handle.net/11729/1220
dc.identifier.urihttp://dx.doi.org/10.1016/j.vlsi.2016.12.014
dc.description.abstractThis work presents a new low-loss active inductor whose self-resonance frequency and quality factor parameters can be adjusted independently from each other. In order to achieve this property, a new input topology has been employed which consists of cascode structure with a diode connected transistor. Furthermore, the proposed input topology makes the device robust in terms of its performance over variation in process, voltage and temperature. Additionally, RC feedback is used to cancel series-loss resistance of the active inductor, which allows self-resonant enhancement as well. Schematic and post-layout simulation results show the theoretical validity of the design. To validate the design feasibility for process, voltage and temperature changes, Monte Carlo and temperature analysis are done. Suggested structure shows inductor behavior in the frequency range of 0.3–11.3 GHz. Maximum quality factor is obtained as high as 2.1k at 5.9 GHz. Total power consumption is as low as 1 mW with 1.8 V power supply.en_US
dc.language.isoengen_US
dc.publisherElsevier Science BVen_US
dc.relation.isversionof10.1016/j.vlsi.2016.12.014
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectActive inductoren_US
dc.subjectCMOSen_US
dc.subjectLow-lossen_US
dc.subjectQuality factoren_US
dc.subjectSelf-resonance frequencyen_US
dc.subjectCMOS integrated circuitsen_US
dc.subjectNatural frequenciesen_US
dc.subjectResonanceen_US
dc.subjectStructural designen_US
dc.subjectTopologyen_US
dc.subjectPost layout simulationen_US
dc.subjectProcess , voltage and temperaturesen_US
dc.subjectResonant enhancementsen_US
dc.subjectTotal power consumptionen_US
dc.subjectElectric inductorsen_US
dc.subjectSiliconen_US
dc.subjectDesignen_US
dc.titleLow-loss active inductor with independently adjustable self-resonance frequency and quality factor parametersen_US
dc.typearticleen_US
dc.description.versionPublisher's Versionen_US
dc.relation.journalIntegration, the VLSI Journalen_US
dc.contributor.departmentIşık Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.contributor.departmentIşık University, Faculty of Engineering, Department of Electrical-Electronics Engineeringen_US
dc.contributor.authorID0000-0002-6706-7352
dc.identifier.volume58
dc.identifier.startpage22
dc.identifier.endpage26
dc.peerreviewedYesen_US
dc.publicationstatusPublisheden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorKöprü, Ramazanen_US
dc.relation.indexWOSen_US
dc.relation.indexScopusen_US
dc.relation.indexScience Citation Index Expanded (SCI-EXPANDED)en_US
dc.description.qualityQ3
dc.description.wosidWOS:000405052700003


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