2W Wideband Microwave PA Design for 824-2170 MHz Band Using Normalized Gain Function Method
Kuntman, Hulusi Hakan
Yarman, Bekir Sıddık Binboğa
MetadataShow full item record
In this work, we present the design of a 2W linear wideband microwave PA (power amplifier) targeted to operate in 824-2170 MHz mobile frequency range covering GSM850, EGSM, DCS, PCS and WCDMA. The design is basically based on the NGF (Normalized Gain Function) method which is very recently introduced into the literature. NGF is defined as the ratio of T and |S-21|(2), i.e. T-NGF= T/|S-21|(2), shape of the gain function of the amplifier to be designed and the shape of the transistor forward gain function, respectively. Synthesis of input/output matching networks (IMN/OMN) of the amplifier requires target gain functions, which are mathematically generated in terms of TNGF. The particular transistor used in the design is FP31QF, a 2W HFET from TriQuint Semiconductor. Theoretical PA performance obtained in Matlab is shown to be in a very high agreement with the simulated performance in MWO (Microwave Office) of AWR Inc.
Showing items related by title, author, creator and subject.
Koç, Onur; Kılınç, Sedat; Köprü, Ramazan; Binboğa Yarman, Bekir Sıddık (IEEE, 2016)Nowadays design of communication instruments that use for communication show a great improvement and change. Communication instruments consist of many systems. At this study, microwave amplifier design that has a great ...
Köprü, Ramazan; Kuntman, Hulusi Hakan; Yarman, Bekir Sıddık Binboğa (IEEE, 2013)A new approach is presented to design microwave amplifiers to deliver maximum output power using Simplified Real Frequency Technique (SRFT). Proposed method tracks the maximum stable gain (MSG) curve of the active device ...
Kılınç, Ali; Pınarbaşı, Hacı; Yarman, Bekir Sıddık Binboğa; Aksen, Ahmet (IEEE, 2003)In this paper, a practical broadband microwave amplifier design algorithm based on immittance data modelling is presented. In the course of design, first, the optimum input and output terminations for the active device are ...