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Distributed wideband power amplifier using reactive coupled line feedback structure
(Institute of Electrical and Electronics Engineers Inc, 2015)
A wideband and flat gain distributed power amplifier using a GaN high electron mobility (HEMT) transistor has been designed. The frequency range covers 700 MHz to 4.5 GHz. The small signal gain has the average value of 10 ...
Novel approach to design ultra wideband microwave amplifiers: Normalized gain function method
(Spolecnost Pro Radioelektronicke Inzenyrstvi, 2013-09)
In this work, we propose a novel approach called "Normalized Gain Function (NGF) method" to design low/medium power single stage ultra wide band microwave amplifiers based on linear S parameters of the active device. ...