A new high performance CMOS active inductor
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CitationMomen, H. G., Yazgı, M., Köprü, R. & Saatlo, A. N. (2016). A new high performance CMOS active inductor. Paper presented at the 2016 39th International Conference on Telecommunications and Signal Processing (TSP), 291-294. doi:10.1109/TSP.2016.7760881
A new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.
Source2016 39th International Conference on Telecommunications and Signal Processing (TSP)
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