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dc.contributor.authorGürün, Gökçeen_US
dc.contributor.authorQureshi, Muhammad Shakeelen_US
dc.contributor.authorBalantekin, Müjdaten_US
dc.contributor.authorGüldiken, Rasim Oytunen_US
dc.contributor.authorZahorian, Jaime S.en_US
dc.contributor.authorPeng, Shengyuen_US
dc.contributor.authorBasu, Arindamen_US
dc.contributor.authorKaraman, Mustafaen_US
dc.contributor.authorHasler, Paul E.en_US
dc.contributor.authorDeğertekin, Fahrettin Leventen_US
dc.date.accessioned2019-08-31T12:10:23Z
dc.date.accessioned2019-08-05T16:05:01Z
dc.date.available2019-08-31T12:10:23Z
dc.date.available2019-08-05T16:05:01Z
dc.date.issued2008
dc.identifier.citationGürün, G., Qureshi, M. S., Balantekin, M., Güldiken, R. O., Zahorian, J., Peng, S. Y., & Değertekin, F. L. (2008). Front end CMOS electronics for monolithic integration with CMUT arrays Circuit design and initial experimental results. Presented at the 390-393. doi:10.1109/ULTSYM.2008.0096en_US
dc.identifier.issn1051-0117
dc.identifier.urihttps://hdl.handle.net/11729/1989
dc.identifier.urihttps://dx.doi.org/10.1109/ULTSYM.2008.0096
dc.description.abstractThis paper discusses design of CMOS-ASICs for monolithic integration of CMUT arrays by post-CMOS fabrication. We describe design strategies for monolithic integration and demonstrate the advantages of CMUT-on-CMOS approach. On the same wafer, separate sets of IC cells are designed to interface different types of CMUT arrays for IVUS and ICE applications. Circuit topologies include resistive feedback transimpedance amplifiers on the receiver side, along with multiplexers and buffers. Gains and bandwidths of receiving amplifiers are optimized separately to fit different array specifications such as number of elements, element size and operation bandwidth. To drive CMUTs a high voltage pulser array is designed in the same 3.3V unmodified CMOS technology by combining existing technological layers in an unconventional way. CMUT arrays are then built on top of the custom made 8" wafer containing these circuits fabricated in a 0.35µm standard CMOS process. We present initial characterization of the CMO electronics and pulse-echo measurements obtained post-CMOS fabricated CMUT elements.en_US
dc.language.isoengen_US
dc.relation.isversionof10.1109/ULTSYM.2008.0096
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCapacitive interface circuiten_US
dc.subjectCMUTsen_US
dc.subjectElectronicsen_US
dc.subjectInput referred noiseen_US
dc.subjectIntegrationen_US
dc.subjectMonolithicen_US
dc.subjectTransimpedanceen_US
dc.subjectApplication specific integrated circuitsen_US
dc.subjectBandwidthen_US
dc.subjectCMOS integrated circuitsen_US
dc.subjectDifferential amplifiersen_US
dc.subjectElectric network topologyen_US
dc.subjectFabricationen_US
dc.subjectIntegrated circuit manufactureen_US
dc.subjectLogic circuitsen_US
dc.subjectUltrasonicsen_US
dc.subjectUltrasonic transducersen_US
dc.titleFront-end CMOS electronics for monolithic integration with CMUT arrays: Circuit design and initial experimental resultsen_US
dc.typeconferenceObjecten_US
dc.description.versionPublisher's Versionen_US
dc.relation.journalProceedings - IEEE Ultrasonics Symposiumen_US
dc.contributor.departmentIşık Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.contributor.departmentIşık University, Faculty of Engineering, Department of Electrical-Electronics Engineeringen_US
dc.identifier.startpage390
dc.identifier.endpage393
dc.peerreviewedYesen_US
dc.publicationstatusPublisheden_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorKaraman, Mustafaen_US


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