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    2W wideband microwave PA design for 824-2170 MHz band using normalized gain function method
    (IEEE, 2013) Köprü, Ramazan; Kuntman, Hulusi Hakan; Yarman, Bekir Sıddık Binboğa
    In this work, we present the design of a 2W linear wideband microwave PA (power amplifier) targeted to operate in 824-2170 MHz mobile frequency range covering GSM850, EGSM, DCS, PCS and WCDMA. The design is basically based on the NGF (Normalized Gain Function) method which is very recently introduced into the literature. NGF is defined as the ratio of T and |S-21|(2), i.e. T-NGF= T/|S-21|(2), shape of the gain function of the amplifier to be designed and the shape of the transistor forward gain function, respectively. Synthesis of input/output matching networks (IMN/OMN) of the amplifier requires target gain functions, which are mathematically generated in terms of TNGF. The particular transistor used in the design is FP31QF, a 2W HFET from TriQuint Semiconductor. Theoretical PA performance obtained in Matlab is shown to be in a very high agreement with the simulated performance in MWO (Microwave Office) of AWR Inc.
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    Novel approach to design ultra wideband microwave amplifiers: Normalized gain function method
    (Spolecnost Pro Radioelektronicke Inzenyrstvi, 2013-09) Köprü, Ramazan; Kuntman, Hulusi Hakan; Yarman, Bekir Sıddık Binboğa
    In this work, we propose a novel approach called "Normalized Gain Function (NGF) method" to design low/medium power single stage ultra wide band microwave amplifiers based on linear S parameters of the active device. Normalized Gain Function T-NGF is defined as the ratio of T and vertical bar S-21 vertical bar(2), desired shape or frequency response of the gain function of the-amplifier to be designed and the shape of the transistor forward gain function, respectively. Synthesis of input/output matching networks (IMN/OMN) of the amplifier requires mathematically generated target gain functions to be tracked in two different nonlinear optimization processes. In this manner, NGF not only facilitates a mathematical base to share the amplifier gain function into such two distinct target gain functions, but also allows their precise computation in terms of T-NGF=T/vertical bar S-21 vertical bar(2) at the very beginning of the design. The particular ainplifier presented as the design example operates over 800-5200 MHz to target GSM, UNITS,. Wi-Fi and WiMAX applications. An SRFT (Simplified Real Frequency Technique) based design example supported by simulations in MWO (Micro Wave Office from AWR Corporation) is given using a 1400 mW pHEMT transistor, TGF2021-01 from TriQuint Semiconductor.
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    A novel method to design wideband power amplifier for wireless communication
    (IEEE, 2013) Köprü, Ramazan; Kuntman, Hulusi Hakan; Yarman, Bekir Sıddık Binboğa
    A new approach is presented to design microwave amplifiers to deliver maximum output power using Simplified Real Frequency Technique (SRFT). Proposed method tracks the maximum stable gain (MSG) curve of the active device (BJT, FET etc.) under consideration. Maximum Stable Gain Amplifier (MSGA) possesses higher gain than that of the constant or Flat Gain Amplifier (FGA) along the operating frequency band. Compared to FGA, it is this feature that makes MSGA high efficiency and low DC power consumption amplifier. Employing the proposed design method, a MSG power amplifier is constructed over the frequency band of 800-5200 MHz which can be utilized for GSM, UMTS, Wi-Fi and Wi-MAX applications.
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    On numerical design technique of wideband microwave amplifiers based on GaN small-signal device model
    (Springer, 2014-10) Köprü, Ramazan; Kuntman, Hulusi Hakan; Yarman, Bekir Sıddık Binboğa
    This work presents an application of Normalized Gain Function (NGF) method to the design of linear wideband microwave amplifiers based on small-signal model of a device. NGF has been originally developed to be used together with an S-parameter (*.s2p) file, whereas this work enables the NGF to be able to work with explicit S-parameter formulae derived from the small-signal model of the device. This approach provides the designer to be able to use simple set of S-parameter equations instead of S-parameter file of the device. Representation of the device simply by several model equations not only eliminates the need of carrying large number of data but also provides the capability of equation-based easy, realistic and equispaced S-parameter data generation in any desired resolution in frequency axis without requiring interpolation. NGF is defined as the ratio of T and |S-21|(2), i.e. T-N = T/|S-21|(2), gain function of the amplifier to be designed and transistor forward gain function, respectively. Synthesis of output/input matching networks (OMN/IMN) of the amplifier requires two target gain functions in terms of T-N, to be used in two sequential non-linear optimization procedures, respectively. An amplifier with a flat gain of similar to 10 dB operating in 0.8-2.35 GHz is designed using a small-signal model of an experimental GaN-HEMT. Theoretical amplifier performance obtained in Matlab is shown to be in excellent agreement with the simulated performance in MWO (Microwave Office, AWR Inc.). A prototype low-power amplifier having a similar to 10 to 12 dB gain, operating in (0.9-1.5 GHz) is also produced and measured which yielded good performance results.