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Yayın A novel method to design wideband power amplifier for wireless communication(IEEE, 2013) Köprü, Ramazan; Kuntman, Hulusi Hakan; Yarman, Bekir Sıddık BinboğaA new approach is presented to design microwave amplifiers to deliver maximum output power using Simplified Real Frequency Technique (SRFT). Proposed method tracks the maximum stable gain (MSG) curve of the active device (BJT, FET etc.) under consideration. Maximum Stable Gain Amplifier (MSGA) possesses higher gain than that of the constant or Flat Gain Amplifier (FGA) along the operating frequency band. Compared to FGA, it is this feature that makes MSGA high efficiency and low DC power consumption amplifier. Employing the proposed design method, a MSG power amplifier is constructed over the frequency band of 800-5200 MHz which can be utilized for GSM, UMTS, Wi-Fi and Wi-MAX applications.Yayın Novel approach to design ultra wideband microwave amplifiers: Normalized gain function method(Spolecnost Pro Radioelektronicke Inzenyrstvi, 2013-09) Köprü, Ramazan; Kuntman, Hulusi Hakan; Yarman, Bekir Sıddık BinboğaIn this work, we propose a novel approach called "Normalized Gain Function (NGF) method" to design low/medium power single stage ultra wide band microwave amplifiers based on linear S parameters of the active device. Normalized Gain Function T-NGF is defined as the ratio of T and vertical bar S-21 vertical bar(2), desired shape or frequency response of the gain function of the-amplifier to be designed and the shape of the transistor forward gain function, respectively. Synthesis of input/output matching networks (IMN/OMN) of the amplifier requires mathematically generated target gain functions to be tracked in two different nonlinear optimization processes. In this manner, NGF not only facilitates a mathematical base to share the amplifier gain function into such two distinct target gain functions, but also allows their precise computation in terms of T-NGF=T/vertical bar S-21 vertical bar(2) at the very beginning of the design. The particular ainplifier presented as the design example operates over 800-5200 MHz to target GSM, UNITS,. Wi-Fi and WiMAX applications. An SRFT (Simplified Real Frequency Technique) based design example supported by simulations in MWO (Micro Wave Office from AWR Corporation) is given using a 1400 mW pHEMT transistor, TGF2021-01 from TriQuint Semiconductor.












