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Yayın A rectifier circuit using add-differentiate IC with a minimal number of CMOS transistors(IEEE, 2018) Göknar, İzzet Cem; Minayi, ElhamUsing the recently developed Add-Differentiate 5-terminal Integrated Circuit, AD-IC (which possess 12 CMOS transistors only), augmented with two diodes, a new rectifier configuration is presented. Transistor level circuit and its layout are provided and the rectifier is simulated with parameters extracted from the layout showing very good conformity with desired rectifier behavior. Finally, a table of comparison of the proposed rectifier with fourteen others, existing in the literature, is included to conclude the paper.Yayın Single active device metamutator; Its application to impedance simulation and in particular to FDNR(IEEE, 2017) Minayi, Elham; Göknar, İzzet Cemhe proposed Metamutator configuration employs only one Fully Differential Current Conveyor (FDCCII) which has 9 terminals including ground. By properly interconnecting these terminals a 4-port Metamutator is obtained without use of any other external element. It maintains the following advantages: (i) use of only one active element: less is the number of active devices less is the amount of disparity, (ii) possibility of realizing Memristors, Capacitors, Inductors, Frequency Dependent Negative Resistor (FDNR), which can be used to make integrated circuit active filters, (iii) no need to impose component choice constraints. SPICE simulations' results using TSMC 0.18 mu m CMOS process parameters and +/- 0.9V supply voltages validate the theoretical predictions.Yayın CIM a current inverting metamutator and its application to universal filters among others(IEEE, 2017) Minayi, Elham; Göknar, İzzet CemA new kind of metamutator namely "Current Inverting Metamutator," its realizations using different types of active blocks and some of its applications are given in this paper. As a classical application of the metamutator simulation of a memristor and, as an original application, several schemes realizing universal filters are proposed. The post-layout characteristics of both applications, using TSMC 0.13 mu m process parameters with +/- 0.75 V power supply voltage, are presented to confirm the theoretical analysis.
