Filtreler

2016 - 20172
Filtreleri Sıfırla

Ayarlar

Yazar: Saatlo, Ali Naderi × Konu: CMOS ×

Arama Sonuçları

Listeleniyor 1 - 2 / 2
  • Küçük Resim
    Yayın
    A new high performance CMOS active inductor
    (IEEE, 2016) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, Ramazan; Saatlo, Ali Naderi
    A new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.
  • Küçük Resim
    Yayın
    Low-loss active inductor with independently adjustable self-resonance frequency and quality factor parameters
    (Elsevier Science BV, 2017-06) Köprü, Ramazan; Momen, Hadi Ghasemzadeh; Yazgı, Metin; Saatlo, Ali Naderi
    This work presents a new low-loss active inductor whose self-resonance frequency and quality factor parameters can be adjusted independently from each other. In order to achieve this property, a new input topology has been employed which consists of cascode structure with a diode connected transistor. Furthermore, the proposed input topology makes the device robust in terms of its performance over variation in process, voltage and temperature. Additionally, RC feedback is used to cancel series-loss resistance of the active inductor, which allows self-resonant enhancement as well. Schematic and post-layout simulation results show the theoretical validity of the design. To validate the design feasibility for process, voltage and temperature changes, Monte Carlo and temperature analysis are done. Suggested structure shows inductor behavior in the frequency range of 0.3–11.3 GHz. Maximum quality factor is obtained as high as 2.1k at 5.9 GHz. Total power consumption is as low as 1 mW with 1.8 V power supply.