On numerical design technique of wideband microwave amplifiers based on GaN small-signal device model

Basit Öğe Kaydı
dc.authorid0000-0002-6706-7352
dc.authorid0000-0003-1562-5524
dc.contributor.authorKöprü, Ramazanen_US
dc.contributor.authorKuntman, Hulusi Hakanen_US
dc.contributor.authorYarman, Bekir Sıddık Binboğaen_US
dc.date.accessioned2015-01-15T23:02:49Z
dc.date.available2015-01-15T23:02:49Z
dc.date.issued2014-10
dc.departmentIşık Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.departmentIşık University, Faculty of Engineering, Department of Electrical-Electronics Engineeringen_US
dc.description.abstractThis work presents an application of Normalized Gain Function (NGF) method to the design of linear wideband microwave amplifiers based on small-signal model of a device. NGF has been originally developed to be used together with an S-parameter (*.s2p) file, whereas this work enables the NGF to be able to work with explicit S-parameter formulae derived from the small-signal model of the device. This approach provides the designer to be able to use simple set of S-parameter equations instead of S-parameter file of the device. Representation of the device simply by several model equations not only eliminates the need of carrying large number of data but also provides the capability of equation-based easy, realistic and equispaced S-parameter data generation in any desired resolution in frequency axis without requiring interpolation. NGF is defined as the ratio of T and |S-21|(2), i.e. T-N = T/|S-21|(2), gain function of the amplifier to be designed and transistor forward gain function, respectively. Synthesis of output/input matching networks (OMN/IMN) of the amplifier requires two target gain functions in terms of T-N, to be used in two sequential non-linear optimization procedures, respectively. An amplifier with a flat gain of similar to 10 dB operating in 0.8-2.35 GHz is designed using a small-signal model of an experimental GaN-HEMT. Theoretical amplifier performance obtained in Matlab is shown to be in excellent agreement with the simulated performance in MWO (Microwave Office, AWR Inc.). A prototype low-power amplifier having a similar to 10 to 12 dB gain, operating in (0.9-1.5 GHz) is also produced and measured which yielded good performance results.en_US
dc.description.sponsorshipThe work reported here has been carried out at Isik University and Istanbul University. We here thank to Sedat Kilinc, of Istanbul University, for his invaluable contributions in simulations, layout design, prototyping and VNA measurements. We also thank to Dr. Koray Gurkan, of Istanbul University, for his great assistance in pcb board manufacturing via prototyping machine. We also appreciate the Scientific Research Projects Unit (BAP) of Istanbul University which supported this work with the project code 18549en_US
dc.description.versionPublisher's Versionen_US
dc.identifier.citationKöprü, R., Kuntman, H. H., & Yarman, B. S. B. (2014). On numerical design technique of wideband microwave amplifiers based on GaN small-signal device model. Analog Integrated Circuits and Signal Processing, 81(1), 71-87. doi:10.1007/s10470-014-0355-4en_US
dc.identifier.doi10.1007/s10470-014-0355-4
dc.identifier.endpage87
dc.identifier.issn0925-1030
dc.identifier.issn1573-1979
dc.identifier.issue1
dc.identifier.issueSI
dc.identifier.scopus2-s2.0-84918841218
dc.identifier.scopusqualityQ3
dc.identifier.startpage71
dc.identifier.urihttps://hdl.handle.net/11729/515
dc.identifier.urihttp://dx.doi.org/10.1007/s10470-014-0355-4
dc.identifier.volume81
dc.identifier.wosWOS:000342426000009
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakScience Citation Index Expanded (SCI-EXPANDED)en_US
dc.institutionauthorKöprü, Ramazanen_US
dc.institutionauthorid0000-0002-6706-7352
dc.language.isoenen_US
dc.peerreviewedYesen_US
dc.publicationstatusPublisheden_US
dc.publisherSpringeren_US
dc.relation.ispartofAnalog Integrated Circuits and Signal Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNormalized gain function method (NGF)en_US
dc.subjectSimplified real frequency technique (SRFT)en_US
dc.subjectWideband microwave amplifieren_US
dc.subjectSmall-signal modelen_US
dc.subjectGaN HEMTen_US
dc.subjectUltra wideband matching networksen_US
dc.subjectReal frequency techniqueen_US
dc.subjectLadder synthesisen_US
dc.titleOn numerical design technique of wideband microwave amplifiers based on GaN small-signal device modelen_US
dc.typeArticleen_US
dspace.entity.typePublication

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
515.pdf
Boyut:
3.04 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Publisher's Version
İndir

Koleksiyon

Makale Koleksiyonu | Elektrik-Elektronik Mühendisliği Bölümü
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu